EMT1DXV6T1G PNP Transistor

The EMT1DXV6T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the EMT1DXV6T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The EMT1DXV6T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the EMT1DXV6T1G transistor as follows.

EMT1DXV6T1G Transistor Specification

Transistor Code		EMT1DXV6T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-563
Transistor SMD Code		3T
Collector Power Dissipation (Maximum)	PC	0.357W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	140MHz
Collector Capacitance	CC	3.5pF

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