E20188 NPN Transistor

The E20188 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the E20188 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The E20188 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the E20188 transistor as follows.

E20188 Transistor Specification

Transistor Code		E20188
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		X115
Collector Power Dissipation (Maximum)	PC	65W
Collector-Base Voltage (Maximum)	VCB	65V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	6.7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	470MHz

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