E20124 NPN Transistor

The E20124 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the E20124 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The E20124 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the E20124 transistor as follows.

E20124 Transistor Specification

Transistor Code		E20124
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		20209
Collector Power Dissipation (Maximum)	PC	130W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	7.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	1400MHz

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