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E20080 NPN Transistor

The E20080 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the E20080 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The E20080 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the E20080 transistor as follows.

Circuit diagram symbol of the E20080 transistor

E20080 Transistor Specification

Transistor Code E20080
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 20209
Collector Power Dissipation (Maximum) PC 123W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 3.4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 1600MHz
Collector Capacitance CC 25pF

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