E1B NPN Transistor

The E1B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the E1B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The E1B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the E1B transistor as follows.

E1B Transistor Specification

Transistor Code		E1B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M122
Collector Power Dissipation (Maximum)	PC	5W
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.25A
Operating Junction Temperature (Maximum)	TJ	140°C

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