E13005SDL NPN Transistor

The E13005SDL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the E13005SDL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The E13005SDL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the E13005SDL transistor as follows.

E13005SDL Transistor Specification

Transistor Code		E13005SDL
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126D
Collector Power Dissipation (Maximum)	PC	38W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	4MHz

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