DTS812MX NPN Transistor

The DTS812MX is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DTS812MX transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DTS812MX transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DTS812MX transistor as follows.

DTS812MX Transistor Specification

Transistor Code		DTS812MX
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Emitter Voltage (Maximum)	VCE	900V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		6
Transition Frequency	FT	1.5MHz

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