DTN9000T NPN Transistor

The DTN9000T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DTN9000T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DTN9000T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DTN9000T transistor as follows.

DTN9000T Transistor Specification

Transistor Code		DTN9000T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO237
Collector Power Dissipation (Maximum)	PC	0.83W
Collector-Base Voltage (Maximum)	VCB	450V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	50MHz
Collector Capacitance	CC	8pF

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