DRDC3105E6 NPN Transistor

The DRDC3105E6 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DRDC3105E6 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DRDC3105E6 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DRDC3105E6 transistor as follows.

DRDC3105E6 Transistor Specification

Transistor Code		DRDC3105E6
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-26
Transistor SMD Code		3105
Collector Power Dissipation (Maximum)	PC	0.9W
Collector-Emitter Voltage (Maximum)	VCE	6V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200

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