DPLS4140E PNP Transistor

The DPLS4140E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the DPLS4140E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DPLS4140E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the DPLS4140E transistor as follows.

DPLS4140E Transistor Specification

Transistor Code		DPLS4140E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-223
Transistor SMD Code		P414A
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	150MHz
Collector Capacitance	CC	55pF

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