DNLS412E NPN Transistor

The DNLS412E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DNLS412E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DNLS412E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DNLS412E transistor as follows.

DNLS412E Transistor Specification

Transistor Code		DNLS412E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		N412
Collector Power Dissipation (Maximum)	PC	1W
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	4A
Forward Current Transfer Ratio (hFE Value)		500
Transition Frequency	FT	150MHz

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