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DMS935E1 NPN Transistor

The DMS935E1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DMS935E1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DMS935E1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DMS935E1 transistor as follows.

Circuit diagram symbol of the DMS935E1 transistor

DMS935E1 Transistor Specification

Transistor Code DMS935E1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-666
Transistor SMD Code X0
Collector Power Dissipation (Maximum) PC 0.125W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 1300MHz

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More Transistors Datasheets in SOT-666 Package

DMS935E2 DMS935E2 NPN Transistor DMR935E1 DMR935E1 PNP Transistor