DMMT5551S NPN Transistor

The DMMT5551S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DMMT5551S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DMMT5551S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DMMT5551S transistor as follows.

DMMT5551S Transistor Specification

Transistor Code		DMMT5551S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT26
Transistor SMD Code		K4T
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	300MHz
Collector Capacitance	CC	6pF

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