DMC506E2 NPN Transistor

The DMC506E2 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DMC506E2 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DMC506E2 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DMC506E2 transistor as follows.

DMC506E2 Transistor Specification

Transistor Code		DMC506E2
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-363
Transistor SMD Code		D2
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.015A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		65
Transition Frequency	FT	450MHz

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