DMC505E0 NPN Transistor

The DMC505E0 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DMC505E0 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DMC505E0 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DMC505E0 transistor as follows.

DMC505E0 Transistor Specification

Transistor Code		DMC505E0
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-363
Transistor SMD Code		C8
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		75
Transition Frequency	FT	1900MHz
Collector Capacitance	CC	1.2pF

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