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DK55SD NPN Transistor

The DK55SD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DK55SD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DK55SD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DK55SD transistor as follows.

Circuit diagram symbol of the DK55SD transistor

DK55SD Transistor Specification

Transistor Code DK55SD
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO252 TO251
Collector Power Dissipation (Maximum) PC 43W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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More Transistors Datasheets in TO252_TO251 Package

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