D66ES6 NPN Transistor

The D66ES6 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D66ES6 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D66ES6 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D66ES6 transistor as follows.

D66ES6 Transistor Specification

Transistor Code		D66ES6
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO53
Collector Power Dissipation (Maximum)	PC	62W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		100

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