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D66DS6 NPN Transistor

The D66DS6 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D66DS6 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D66DS6 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D66DS6 transistor as follows.

Circuit diagram symbol of the D66DS6 transistor

D66DS6 Transistor Specification

Transistor Code D66DS6
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO53
Collector Power Dissipation (Maximum) PC 62W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 100

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