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D64ES6 NPN Transistor

The D64ES6 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D64ES6 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D64ES6 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D64ES6 transistor as follows.

Circuit diagram symbol of the D64ES6 transistor

D64ES6 Transistor Specification

Transistor Code D64ES6
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 125W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 100

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