D60T3575 NPN Transistor

The D60T3575 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D60T3575 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D60T3575 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D60T3575 transistor as follows.

D60T3575 Transistor Specification

Transistor Code		D60T3575
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO62
Collector Power Dissipation (Maximum)	PC	885W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	7MHz

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