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D16G6 NPN Transistor

The D16G6 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D16G6 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D16G6 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D16G6 transistor as follows.

Circuit diagram symbol of the D16G6 transistor

D16G6 Transistor Specification

Transistor Code D16G6
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.025A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 500MHz
Collector Capacitance CC 1.5pF

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