D11E406 NPN Transistor

The D11E406 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D11E406 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D11E406 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D11E406 transistor as follows.

D11E406 Transistor Specification

Transistor Code		D11E406
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	300MHz
Collector Capacitance	CC	9pF

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