D11C10B1 NPN Transistor

The D11C10B1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D11C10B1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D11C10B1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D11C10B1 transistor as follows.

D11C10B1 Transistor Specification

Transistor Code		D11C10B1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO37
Collector Power Dissipation (Maximum)	PC	1.5W
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	0.16MHz

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