D11C1057 NPN Transistor

The D11C1057 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D11C1057 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D11C1057 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D11C1057 transistor as follows.

D11C1057 Transistor Specification

Transistor Code		D11C1057
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SIP
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	50MHz
Collector Capacitance	CC	20pF

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