D10B1055 NPN Transistor

The D10B1055 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D10B1055 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D10B1055 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D10B1055 transistor as follows.

D10B1055 Transistor Specification

Transistor Code		D10B1055
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SIP
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	1V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	130MHz

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