CXT5551E NPN Transistor

The CXT5551E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CXT5551E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CXT5551E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CXT5551E transistor as follows.

CXT5551E Transistor Specification

Transistor Code		CXT5551E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT89
Collector Power Dissipation (Maximum)	PC	1.2W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	220V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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