CSD1306E NPN Transistor

The CSD1306E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CSD1306E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CSD1306E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CSD1306E transistor as follows.

CSD1306E Transistor Specification

Transistor Code		CSD1306E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		400
Transition Frequency	FT	250MHz
Collector Capacitance	CC	10pF

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