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CSB857D PNP Transistor

The CSB857D is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CSB857D transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CSB857D transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CSB857D transistor as follows.

Circuit diagram symbol of the CSB857D transistor

CSB857D Transistor Specification

Transistor Code CSB857D
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-220
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 160
Transition Frequency FT 15MHz

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