CSB817F PNP Transistor

The CSB817F is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CSB817F transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CSB817F transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CSB817F transistor as follows.

CSB817F Transistor Specification

Transistor Code		CSB817F
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-3P
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	15MHz
Collector Capacitance	CC	300pF

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