CSB810 PNP Transistor

The CSB810 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CSB810 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CSB810 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CSB810 transistor as follows.

CSB810 Transistor Specification

Transistor Code		CSB810
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-220
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	110V
Collector-Emitter Voltage (Maximum)	VCE	110V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		1000
Transition Frequency	FT	100MHz
Collector Capacitance	CC	110pF

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