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CSB1370E PNP Transistor

The CSB1370E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CSB1370E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CSB1370E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CSB1370E transistor as follows.

Circuit diagram symbol of the CSB1370E transistor

CSB1370E Transistor Specification

Transistor Code CSB1370E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-220
Collector Power Dissipation (Maximum) PC 30W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 15MHz
Collector Capacitance CC 80pF

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