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CMUT5551E NPN Transistor

The CMUT5551E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CMUT5551E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CMUT5551E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CMUT5551E transistor as follows.

Circuit diagram symbol of the CMUT5551E transistor

CMUT5551E Transistor Specification

Transistor Code CMUT5551E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-523
Transistor SMD Code 5C1
Collector Power Dissipation (Maximum) PC 0.25W
Collector-Base Voltage (Maximum) VCB 250V
Collector-Emitter Voltage (Maximum) VCE 220V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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