CMLT3906E PNP Transistor

The CMLT3906E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CMLT3906E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CMLT3906E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CMLT3906E transistor as follows.

CMLT3906E Transistor Specification

Transistor Code		CMLT3906E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-563
Transistor SMD Code		L06
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	300MHz
Collector Capacitance	CC	4pF

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