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CMBT8050E NPN Transistor

The CMBT8050E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CMBT8050E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CMBT8050E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CMBT8050E transistor as follows.

Circuit diagram symbol of the CMBT8050E transistor

CMBT8050E Transistor Specification

Transistor Code CMBT8050E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Collector Power Dissipation (Maximum) PC 0.25W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 280
Transition Frequency FT 150MHz
Collector Capacitance CC 20pF

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