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CMBT3906E PNP Transistor

The CMBT3906E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CMBT3906E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CMBT3906E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CMBT3906E transistor as follows.

Circuit diagram symbol of the CMBT3906E transistor

CMBT3906E Transistor Specification

Transistor Code CMBT3906E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT-923
Transistor SMD Code G
Collector Power Dissipation (Maximum) PC 0.1W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 300MHz
Collector Capacitance CC 4pF

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More Transistors Datasheets in SOT-923 Package

NT353 NT353 NPN Transistor NT331 NT331 NPN Transistor MMBT3904Z MMBT3904Z NPN Transistor NT357 NT357 NPN Transistor CMBT3904E CMBT3904E NPN Transistor NT332 NT332 PNP Transistor MMBT3904SLT1 MMBT3904SLT1 NPN Transistor MMBT3906Z MMBT3906Z PNP Transistor NT358 NT358 PNP Transistor NT354 NT354 PNP Transistor