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CMBA847G NPN Transistor

The CMBA847G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CMBA847G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CMBA847G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CMBA847G transistor as follows.

Circuit diagram symbol of the CMBA847G transistor

CMBA847G Transistor Specification

Transistor Code CMBA847G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 400
Transition Frequency FT 200MHz
Collector Capacitance CC 3.5pF

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