CHUMX1GP NPN Transistor

The CHUMX1GP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CHUMX1GP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CHUMX1GP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CHUMX1GP transistor as follows.

CHUMX1GP Transistor Specification

Transistor Code		CHUMX1GP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-363
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	180MHz
Collector Capacitance	CC	2pF

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