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CHT857BVGP PNP Transistor

The CHT857BVGP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CHT857BVGP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CHT857BVGP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CHT857BVGP transistor as follows.

Circuit diagram symbol of the CHT857BVGP transistor

CHT857BVGP Transistor Specification

Transistor Code CHT857BVGP
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT-563
Transistor SMD Code V4
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 200MHz
Collector Capacitance CC 3pF

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More Transistors Datasheets in SOT-563 Package

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