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CHT5551GP NPN Transistor

The CHT5551GP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CHT5551GP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CHT5551GP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CHT5551GP transistor as follows.

Circuit diagram symbol of the CHT5551GP transistor

CHT5551GP Transistor Specification

Transistor Code CHT5551GP
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code FT
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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