CH858BGP PNP Transistor

The CH858BGP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CH858BGP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CH858BGP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CH858BGP transistor as follows.

CH858BGP Transistor Specification

Transistor Code		CH858BGP
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		J18_3K_J19
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		125
Transition Frequency	FT	200MHz
Collector Capacitance	CC	4.5pF

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