CH857SGP PNP Transistor

The CH857SGP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CH857SGP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CH857SGP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CH857SGP transistor as follows.

CH857SGP Transistor Specification

Transistor Code		CH857SGP
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT363
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		125
Transition Frequency	FT	200MHz
Collector Capacitance	CC	3.5pF

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