CH817SGP NPN Transistor

The CH817SGP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CH817SGP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CH817SGP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CH817SGP transistor as follows.

CH817SGP Transistor Specification

Transistor Code		CH817SGP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT457
Collector Power Dissipation (Maximum)	PC	0.33W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		160
Transition Frequency	FT	170MHz
Collector Capacitance	CC	6pF

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