CG125E NPN Transistor

The CG125E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CG125E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CG125E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CG125E transistor as follows.

CG125E Transistor Specification

Transistor Code		CG125E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		MICRO-X
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.02A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		11
Transition Frequency	FT	2000MHz

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More Transistors Datasheets in MICRO-X Package

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