CFB810 PNP Transistor

The CFB810 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CFB810 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CFB810 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CFB810 transistor as follows.

CFB810 Transistor Specification

Transistor Code		CFB810
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-220FP
Collector Power Dissipation (Maximum)	PC	60W
Collector-Base Voltage (Maximum)	VCB	110V
Collector-Emitter Voltage (Maximum)	VCE	110V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		1000
Transition Frequency	FT	100MHz
Collector Capacitance	CC	110pF

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