CE1N2R NPN Transistor

The CE1N2R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CE1N2R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CE1N2R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CE1N2R transistor as follows.

CE1N2R Transistor Specification

Transistor Code		CE1N2R
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	15V
Forward Current Transfer Ratio (hFE Value)		1000

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