CD9013GHI NPN Transistor

The CD9013GHI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CD9013GHI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CD9013GHI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CD9013GHI transistor as follows.

CD9013GHI Transistor Specification

Transistor Code		CD9013GHI
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		118
Transition Frequency	FT	200MHz
Collector Capacitance	CC	10pF

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