CD8550D PNP Transistor

The CD8550D is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CD8550D transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CD8550D transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CD8550D transistor as follows.

CD8550D Transistor Specification

Transistor Code		CD8550D
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-92
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		160
Transition Frequency	FT	100MHz
Collector Capacitance	CC	35pF

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