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CD15000E NPN Transistor

The CD15000E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CD15000E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CD15000E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CD15000E transistor as follows.

Circuit diagram symbol of the CD15000E transistor

CD15000E Transistor Specification

Transistor Code CD15000E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO39
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 130MHz
Collector Capacitance CC 1pF

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