BUW32AP PNP Transistor

The BUW32AP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BUW32AP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUW32AP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BUW32AP transistor as follows.

BUW32AP Transistor Specification

Transistor Code		BUW32AP
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	105W
Collector-Base Voltage (Maximum)	VCB	450V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		15

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