BUV70 NPN Transistor

The BUV70 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV70 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV70 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV70 transistor as follows.

BUV70 Transistor Specification

Transistor Code		BUV70
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TOP3
Collector Power Dissipation (Maximum)	PC	140W
Collector-Base Voltage (Maximum)	VCB	1300V
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		5
Transition Frequency	FT	9MHz

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